Inner ring — Direct detectors:
CdTe (Z: 48+52) density 5.85 g/cm³
CZT (Z: 48+30+52) density 5.78
HgI₂ (Z: 80+53) density 6.36 — best γ stopping power
Middle ring — Scintillators:
NaI(Tl) — 43k photons/MeV @ 415nm
LYSO:Ce — 33k photons/MeV @ 420nm, faster
Outer ring — PV conversion:
InGaP — bandgap 1.9 eV, matched to 415nm
GaAs — bandgap 1.42 eV, rad-tolerant
Radiation-hard electronics (reactor support):
GaN — power electronics, survives reactor env.
SiC — high-temp power electronics, rad-hard
Note: SiC betavoltaic role is parked at reactor scale (10% < 33% thermal). Active at SE Cell scale.